Cryogenic and High Temperature Performance of 4H-SiC Vertical Junction Field Effect Transistors (VJFETs) for Space Applications

I. Sankin L. Cheng

doi:10.1109/ispsd.2005.1487993

Cryogenic and High Temperature Performance of 4H-SiC Vertical Junction Field Effect Transistors (VJFETs) for Space Applications

I. Sankin L. Cheng

https://doi.org/10.1109/ispsd.2005.1487993

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Publication Date: May 23, 2005

Citations: 24

#Vertical Junction Field Effect Transistors #Junction Field Effect Transistor + Show 8 more

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Abstract

In this paper, we present an investigation on the different aspects of the performance of a 600V, 3A 4H-SiC vertical-trench junction field effect transistor (VJFET) at cryogenic and high temperatures. Some critical device physics related factors that affect the DC characteristics and switching performance of the device are explored. In particular, the experimental low-temperature performance of 4H-SiC VJFETs (down to 30K or -243/spl deg/C) is presented for the first time to our knowledge.

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