Abstract
A new process, which requires only one constant temperature zone for the vapour phase growth of III-V compounds, is described. In this system the source zone is maintained at the same temperature as that of the deposition zone in marked contrast to widely used two temperature processes. From thermodynamic calculations the growth of GaAs, GaP, InAs, InP, and their mixed crystals is shown to be possible without a temperature gradient between the source and the deposition zone of the reactor. Experimental results for the growth of GaAs and GaP show that the growth rate and surface appearance obtained by the present process are comparable to those of the two temperature processes.
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