Abstract
Gate Associated Transistor (GAT) has been shown to have larger safe operating areas (SOAs) than conventional transistors in both forward and reverse base drive operations. Improvement in SOAs was achieved by the gate shielding effect, which suppressed both current crowding in base layer and avalanche multiplication in collector region. High frequency GATs were fabricated with a maximum oscillating frequency Fmax of 400 MHz, collector-emitter breakdown voltage BVCEO of 240 volts. The output power of 52 W, gain of 20.2 dB, and efficiency of 68% in B class amplifier at the operating frequency of 30 MHz were obtained.
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