A New Nonlinear Ion Drift Model of Memristor Element and its Versatile Analog Reconfigurable Realizations

Abstract

While using polynomial functions to define window functions is an initial approach in studying the memristor element, it is susceptible to generating imaginary results. However, using window functions, including the trigonometric function, is a current field of research on the memristor element. This paper uses the trigonometric Blackman window function to present a new memristor element model and investigates its nonlinear ion drift model properties. The motivation of this study is the usage of the trigonometric Blackman window function, which presents a more detailed definition and leads to more accurate results in windowing operations. The Blackman window function can address the issues of border locking and terminal state. Numerical simulations have verified this proposed structure. Additionally, the analog realizations of the memristor element constructed with the Blackman window function have been achieved on a Field Programmable Analog Array, which offers fast prototyping, serving as an alternative approach for emulating memristors.