Abstract
This paper presents a new method to evaluate piezoresistive coefficients of polysilicon in the case of N-doping but valid for other types. We measured and simulated the mechanical stress profile distribution along a bossed membrane using several gauges placed along the radial axis of round membranes. Pressure was applied to the membrane. The electromechanical characterizations of the MEMS membrane are in accordance with the simulations and allowed to extract piezoresistive coefficients of the heavily doped polysilicon.
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