Abstract
his paper presents a complete study of the impactof mechanical stress on the performance of SOI MOSFETs.This investigation includes dc, analog and RF characteristics.Parameters of a small-signal equivalent circuit are also ex-tracted as a function of applied mechanical stress. Piezore-sistance coefficient is shown to be a key element in describingthe enhancement in the characteristics of the device due tomechanical stress.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Telecommunications and Information Technology
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
