Abstract
As a virtual experimental device for analysis and calculation of grown-in microdefects formation in undoped silicon dislocation-free single crystals the software is proposed. The software is built on the basis on diffusion model of formation, growth and coalescence of grown-in microdefects. Diffusion model describes kinetics of defect structure changes during cooling after growth on crystallization temperature to room temperature. The software allows the use of personal computer to investigate the defect structure of dislocation-free silicon single crystals with a diameter on 30 mm to 400 mm grown by floating-zone and Czochralski methods.
Highlights
A vast majority of modern microelectronic and nanoelectronic devices are built on the monocrystalline silicon substrates produced from the crystals grown by the Czochralski (CZ) process and the float-zone (FZ) process
The software allows the use of personal computer to investigate the defect structure of dislocation-free silicon single crystals with a diameter on 30 mm to 400 mm grown by floating-zone and Czochralski methods
In the diffusion model of formation grown-in microdefects all the parameters of precipitates, vacancy microvoids and interstitial dislocation loops are determined through the thermal conditions of growth
Summary
A vast majority of modern microelectronic and nanoelectronic devices are built on the monocrystalline silicon substrates produced from the crystals grown by the Czochralski (CZ) process and the float-zone (FZ) process. Many of the advances in integrated-circuit (IC) manufacturing achieved in recent years would not have been possible without parallel advances in silicon-crystal quality and defect engineering These studies are approaching values that will allow the silicon starting material to be used in the production of critical component dimensions below 18 nm [1]. It is necessary to develop a new method for studying the defect structure of silicon without these drawbacks. This method allows to simulate a real experiment by the software. The aim of this work is to develop a new method of research of grown-in microdefects in dislocation-free silicon single crystals, based on IT-technologies
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