Abstract

The distribution patterns and physical nature (the sign of the lattice strain) of growth microdefects in dislocation-free Si single crystals grown by the floating-zone and Czochralski methods were studied by selective etching and transmission electron microscopy. Mechanisms of formation and transformation of growth microdefects, depending on the crystal growth rate, are proposed. A heterogeneous mechanism of formation of microdefects is considered.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.