Abstract
A method is presented to extract the saturation velocity v sat of charge carriers in the inversion channel of submicron length CMOS devices. The method is more reliable than those available from literature since series resistance effects are included in the formulary. For surface channel NMOS transistors, a saturation velocity of v sat=6.9(±0.5) × 10 6cm/s was measured while for surface ( p-type poly-Si) and buried ( n-type poly-Si) channel PMOS transistors v sat=4.5(±0.5) × 10 6 and 6.0(±0.5) × 10 6cm/s, respective was found.
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