A New Look at Silicon Carbide

Abstract

Silicon Carbide, SiC is one of the most widely used materials that plays a critical role in industries such as: aerospace, electronics, industrial furnaces and wear-resistant mechanical parts among others. Although SiC is widely used in electronics and other high technology applications, the metallurgical, abrasive, and refractory industries are dominate by volume. It is only in the last five or six years that SiC has gained a new and important role in the semiconductor industry. SiC has become a key material in the drive towards electrification. It’s unique physical properties, wide band gap, especially, high temperature performance and “ease of manufacturability makes it a key material going forward. The physical properties that make SiC so unique also represent some serious problems to large scale manufacturing of SiC diodes, transistors and modules. SiC is a very tough material, it has a Mohs hardness rating of 9.5 approaching that of diamond. Just as the semiconductor industry needed high quality defect free silicon wafers to move forward, so did the SiC industry. High quality defect free wafers have just come into the market. They are 4 and six wafers that will allow SiC. These boules can be “sliced” in wafers and run on a standard CMOS fabrication process. Next comes the dicing of the wafers into devices. A diamond saw has to be run at a very slow rate to a material almost as hard as the diamond itself. Die attach brings an interesting problem the devices are generally rate at 200+ deg C and voltages >1000W. Standard epoxy and even Au/Si eutectic die attach has issues has issues at these extreme operating conditions. Lastly, the epoxy molding compound has to be capable of withstanding the harsh conditions and not breakdown. These are all challenges that are being met today. This is a continuing story of how the semiconductor industry adapts to ever changing requirements