Abstract
The operating regime of MOS transistors shifts from collision-dominated drift-diffusion (DD) to less-collision quasi-ballistic (QB) regime. The impact of transport mechanism on the low-frequency noise (LFN) is not well studied for QB devices. Most of the studies rely on the existing theories that were developed for DD-based devices to study LFN even in nanoscale regime. Validity of these models is questionable. In this letter, we extend the conventional carrier-number and correlated-mobility fluctuation model to the QB regime. The model is in accordance with the “apparent mean free path” $(\lambda _{\textit {app}})$ model, which predicts scattering limited noise mechanism in the QB regime. The model is validated with LFN measurement data for III-V QB devices, and shows good agreement with the expected behavior.
Published Version
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