A New High Holding Voltage Dual-Direction SCR With Optimized Segmented Topology

Abstract

While silicon controlled rectifiers (SCRs) are highly robust electrostatic discharge (ESD) protection devices, they typically are not suited for high-voltage ESD protection due to their inherently low holding voltage and thus vulnerability to latch-up threat. In this letter, a new high holding voltage dual-direction SCR (NHHVDDSCR) with a small area and optimized topology is developed in a 0.18- $\mu \text{m}$ CMOS technology. The results of the NHHVDDSCR and other SCR devices measured from the transmission line pulsing are compared and discussed. It is shown that the NHHVDDSCR can possess a relatively high and adjustable holding voltage, as well as an acceptable failure current for robust ESD protection of high voltage applications.