Abstract
A new type of GaAs JFET having a heterojunction gate is proposed. The structure involves epitaxially grown layers of n-GaAs for the channel and of p-GaAlAs for the gate which can be easily delineated by the self-alignment technology using an overgrown p-GaAs. The potential advantages of the heterojunction structure for GaAs FET's over the conventional Schottky barrier are in the fewer masks for fabrication and the short channels expected. Some preliminary experimental results on fabrication technologies and dc characteristics of the new devices are described.
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