Abstract
Abstract The characteristics of a new etchant for dislocation sub-structures in aluminium are described, and compared with those of Lacombe and Beaujard's reagent. Differences between the two etchants are clarified by means of dissolution experiments with single crystal spheres. It is shown that hydrogen peroxide present in the new etchant results in a dissolution rate which is only weakly dependent on crystallographic orientation. The etchant reveals detailed dislocation sub-structures in aluminium without the need for special annealing treatments, but it is not capable of etching ‘clean’ dislocations. The number of etch-pits on single crystals produced by the strain-anneal method is of the right magnitude.
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