Effect of A-site disorder and reduced grain size on low temperature resistivity minima and magnetoresistance behaviour in Nd0.7-xGdxSr0.3MnO3 (0 ≤ x ≤ 0.3)

Abstract

ABSTRACT The present work provides a detailed investigation of the electronic- and magneto-transport properties of bulk and nanostructured Nd0.7-xGdxSr0.3MnO3 (x = 0, 0.1, 0.2 and 0.3) polycrystalline manganites. We have specially addressed the issue of the observed minimum in the temperature dependent resistivity of these manganites in the low temperature regime (<50 K). It is observed that increase of A-site disorder due to progressive substitution of Gd and decrease of grain size enhances the observed resistivity minima. Different theoretical models have been employed to analyze the resistivity data in the low temperature regime. It has been established that the quantum interference effect due to electron–electron interaction, most likely, is the dominant factor of the observed resistivity minimum and upturn in resistivity in the lower temperature regime. The effect of phase separation is also found to play a key role in the electronic-transport of the materials. Further the magnetoresistance is found to increase with the increase of Gd concentration as well as with the decrease of grain size in the low temperature regime. The origin of magnetoresistance has been critically analyzed.