A new concept for a monolithically integrated optoelectronic receiver based on a GaAs-PIN-photodiode and a PJBT

Abstract

We have developed a new concept for an optoelectronic frontend receiver at 0.85 /spl mu/m wavelength. A GaAs-PIN photodiode is coupled to a Permeable Junction Base Transistor (PJBT). The PJBT is a vertical Junction Field Effect Transistor with a homoepitaxial, heavily p-doped gate whose n-doped GaAs channel is selectively grown. Its layer structure incorporates two p-i-n doped layer structures, so it fits ideally to an integration with a PIN photodiode. The fabrication of the integration is described and results of the single devices, both DC and RF measurements, are presented. The performance of the first integrated receiver show the usefulness of this concept for Optoelectronic Integrated Circuits (OEIC) at bitrates of more than 1 Gbit/s.