A New Approach to the Growth of Cubic GaN Films Using an AlN/GaN Ordered Alloy as a Buffer Layer

Abstract

Cubic GaN films on GaAs (100) were successfully grown using a newly introduced AlN/GaN ordered alloy (OA) and plasma-assisted molecular beam epitaxy. The epilayer quality was obtained by using a (AlN) 1 (GaN) 9 OA buffer layer (the numbers represent the number of monolayers). Dominant cubic GaN growth was confirmed by in-situ RHEED observation, photoluminescence (14 K) and X-ray diffraction measurements.