Cubic GaN Film Growth Using AlN/GaN Ordered Alloy by RF Plasma‐Assisted Molecular Beam Epitaxy

Abstract

Cubic GaN films were grown on GaAs (100) using a newly introduced AlN/GaN ordered alloy fabricated by plasma-assisted molecular beam epitaxy. Dominant cubic GaN growth was confirmed by in situ reflection high-energy electron diffraction observations, photoluminescence (14 K) and X-ray diffraction measurements.