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https://doi.org/10.1109/16.622610
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Cite Publication Date: Jan 1, 1997 | |
 Citations: 23 |
A new method is presented to extract the threshold voltage of MOSFETs. It is developed based on an integral function which is insensitive to the drain and source series resistances of the MOSFETs. The method is tested in the environments of circuit simulator (SPICE), device simulation (MEDICI), and measurements.
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