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Abstract
A new analytical threshold voltage model for the doped polysilicon thin-film transistors (poly-Si TFTs) is proposed in this paper, which is related to U-shaped distribution of density of states in the grain boundary, the gate oxide thickness, the substrate doping concentration, and the grain size. Moreover, the new model has a simple functional form and it can reduce to the threshold voltage model of the conventional long channel MOSFET when the grain size is large.
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