Abstract
A novel approach to investigate the assembly and fabrication method for Indium Arsenide nanowires nano devices. Assembly of InAs nanowires field-effect transistor (FET) was realized by dielectrophoresis approach. Before deposition of the contacts, InAs nanowires were treated wet etching in an ammonium polysulfide ((NH4)2Sx) solution to remove a surface oxide layer. The assembled devices were characterized by atomic force microscopy. The experimental results showed that the efficient assembly of InAs nanowires was obtained when the applied alternating current voltage has a frequency of 2MHz and an amplitude of 10V, and the success rate of ideal assembly for InAs nanowires FET had been assessed. Meanwhile, it also provided an effective assembly method for other one-dimensional nanomaterials assembly of nano devices.
Published Version
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