Abstract
An experimental, high throughput and clean multiwafer system for plasma anodization is described. The applications of this system towards growing anodic silicon nitride and anodic silicon dioxide films, as well as the anodic nitridation of SiO 2 films are demonstrated. Pure nitride films thicker than 15 nm may be produced at 950°C. Oxide films are grown at temperature as low as 600°C. SiO 2 films can be converted to a high percentage of nitride by anodic treatment.
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