Electrical Properties of Vapor‐Deposited Silicon Nitride and Silicon Oxide Films on Silicon

Abstract

The electrical properties of vapor‐deposited silicon nitride and silicon oxide films on silicon have been investigated. The silicon nitride films were produced by the reaction at 950°C, while the oxides were prepared at 400°C using the reaction. The properties were compared with those of thermal oxides prepared in dry O2 at 1200°C. As contrasted to the thermal oxides, the silicon nitride films are characterized by polarization and room temperature trapping instabilities, relatively high conductance, and high surface state charge densities. The vapor‐deposited oxides tend to resemble the nitrides in those properties which are associated with the silicon‐ dielectric interface, but the bulk properties are more like those of thermal oxides.