Abstract
In the present work, silicon nitride, and oxide films, as well as two-layered SiNx/SiO2 and three-layered SiO2/SiNx/SiO2 structures, were fabricated on p-type Si-substrates. The structure and element composition was studied by scanning electron microscopy and Rutherford backscattering spectroscopy, respectively. It was shown, spectral positions of photoluminescence maxima, as well as edge absorption, were determined by stoichiometry of SiNx layers. No electroluminescence signal was registered from single-layered silicon nitride films. The intense band at 1.9 eV dominated the electroluminescence spectra of single-layered silica film as well as two- and three-layered structures. It was attributed to silane groups in SiO2 layers. The contribution of emission from silicon nitride layers into electroluminescence of the two- and three-layered structures is discussed.
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