Abstract
Monte Carlo simulations of uniform silicon nMOSFET inversion layers have been performed. Excellent agreement between the simulated and experimental transport characteristics has been observed in the region of strong inversion at both 300K and 77K. The contribution to the effective mobility due to individual subbands has been analyzed and qualitatively explained.
Highlights
Despite decades of research effort ], problems associated with carrier transport in the inversion layers of silicon MOSFETs continue to capture the attention of the research community [2,3,4]
We present here Monte Carlo (MC) simulations of uniform silicon nMOSFET inversion layers within and beyond the ohmic regime for various substrate doping levels and gate biases at different temperatures
Within the range of the lateral electric-field commonly seen in the linear region of silicon nMOSFETs, transport of the two-dimensional electron gas (2DEG) is well described by a two-dimensional multi-subband Boltzmann transport equation (BTE.)
Summary
The contribution to the effective mobility due to individual subbands has been analyzed and qualitatively explained
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