Abstract
Charge sensitive infrared phototransistors (CSIP) realized in a GaAs/AlGaAs double quantum well (QW) structure have so far exploited the tunneling of excited electrons from an isolated island of upper QW to the lower two-dimensional electron gas layer. Another type of CSIP is developed by using a GaAs/AlGaAs double QW crystal, in which inter-QW tunneling is suppressed. Instead of “vertical” tunneling, excited electrons in the upper QW flow in and out the isolated island “laterally” via translational motion through gate-induced potential barriers. The scheme is demonstrated for wavelengths ≈14.6 μm but is suitable for expanding toward longer wavelengths.
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