Abstract

We developed a novel single-photon detector in the long wave infrared (LWIR) spectral region. The detector is a charge-sensitive infrared phototransistor (CSIP) fabricated in a GaAs/AlGaAs double quantum well (QW) structure, in which a photo-generated hole (+e) in the floating gate (upper QW) modulates the capacitively-coupled conductance of the underneath channel (lower QW). The high responsivity (R=4×106A/W) and specific detectivity (D*=1×1015cmHz1/2/W) are achieved. The dynamic range is extended beyond 107 (∼aW to pW) by repeatedly resetting the accumulated holes in the upper QW. The simple structure is feasible for detector array fabrication.

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