Abstract
The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.
Highlights
In recent years, power electronics technology has developed rapidly; it has been widely used in new energy power generation [1,2], electric vehicles [3,4], ship manufacturing [5], and aerospace [6].In these fields, power electronics systems perform the important task of power conversion, which increases the requirements for their reliability
Power electronics systems perform the important task of power conversion, which increases the requirements for their reliability
insulated gate bipolar transistor (IGBT) modules have to endure more than five million power cycles [9]
Summary
Power electronics technology has developed rapidly; it has been widely used in new energy power generation [1,2], electric vehicles [3,4], ship manufacturing [5], and aerospace [6]. In these fields, power electronics systems perform the important task of power conversion, which increases the requirements for their reliability. Harsher operating environments accelerate the failure process, high power [12,13], and high temperature [14,15], in particular
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