Abstract
As a new scheme of master-mold fabrication, a half pitch (hp) 12 nm line and space (L/S) pattern was fabricated from hp 24 nm L/S resist mandrels, which were prepared by electron beam (EB) writing as well as nanoimprinting, followed by the self-aligned double-patterning (SADP) technique. It was observed that the line width roughness (LWR) was reduced and improved by single and multiple nanoimprintings in the new scheme of the master-mold fabrication to make hp 24 nm resist mandrels. We have studied the phenomena and revealed that the resist pattern of nanoimprinting had sharper and smoother shoulders and bottom edges in cross section than those of the EB resist. These shoulder shapes of nanoimprinting seemed to be reflected in its LWR improvement. The new scheme has advantages of resolution enhancement and better pattern quality of LWR on a master mold for nanoimprint lithography, in comparison with conventional optical and EB lithography technologies.
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