Abstract
Abstract The large mismatch in thermal expansion coefficients of silicon and the plastic encapsulants available today introduces severe stresses at the chip surface that might lead to stress-induced displacements of metallization paths. The sensor array discussed here has been designed to measure such displacements. All rows and columns of the array are separated by metal conductors at the chip surface, while each cell contains a Hall device. When a local magnetic field is introduced at the surface by leading a well-known current through one of the metal conductors, two neighbouring Hall elements positioned symmetrically along this conductor can be used to measure the magnetic field. The difference in output voltage of both Hall elements is a measure for the displacement of the current's centre and so of the metal conductor itself.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
