Abstract
Abstract The large mismatch in thermal expansion coefficients of silicon and the plastic encapsulants available today introduces severe stresses at the chip surface, which might lead to stress-induced displacements of metallization paths. The sensor discussed here has been designed to measure such displacements. At the chip surface a local magnetic field is introduced by leading a well-known current through a metal conductor. Two Hall elements integrated symmetrically along this conductor are used to measure the magnetic field. The difference in output voltages of both Hall elements is a measure for the displacement s of the current's centre and so of the metal conductor itself.
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