A <inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>-Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays

Abstract

Selectorless crossbar arrays of resistive random-access memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance ( $M_{t}$ ) measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing $M_{t}$ measurement accuracy. We calibrated the mCAT using a custom-made $32 \times 32$ discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO2- x RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone $M_{t}$ in the range of 1 $\text{k}\Omega $ to 1 $\text{M}\Omega $ with <1% error. For our custom resistive crossbar, 90% of devices of the same resistance range were measured with <10% error. The platform’s limitations have been quantified using large-scale nonideal crossbar simulations.