Abstract
In this paper, we propose a new independent-gate, process-variation-tolerant double-gate (DG) FinFET based sense amplifier design. The new design exploits the DICE (dual interlock cell) latch and the back gate of a double-gate FinFET (DG FinFET) device for dynamic compensation against process variation. The proposed design improves the sensing delay and show excellent tolerance to process variations as compared to independent-gate sense amplifier (IGSA). The primary advantage of the proposed amplifier over previously reported sense amplifier is the low-noise voltage and large critical charge, making it more stable against single event upsets. Failure probability of the proposed design against process parameter variations is analyzed through Monte Carlo analysis.
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