Abstract
A novel Horizontal Current Bipolar Transistor (HCBT) is processed with the scaled down dimensions and the improved technology. The active transistor region is built in the defect-free sidewall of the 580 nm wide n-hills in the (1 1 0) wafer, implying the reduction of the parasitic region's volume, i.e. the extrinsic base and the collector. The fabricated HCBT exhibits the cutoff frequency ( f T) of 21.4 GHz, the maximum frequency of oscillations ( f max) of 32.6 GHz and the collector–emitter breakdown voltage (BV CEO) of 5.6 V, which are the highest f T and the highest f TBV CEO product among the lateral bipolar transistors (LBTs).
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