Abstract
A low resistivity n++-InGaN/p++-GaN tunnel junction is illustrated. The tunneling current density of tunnel junction with 30 percent In content in InGaN layer turns out to be extraordinary high (10 kA cm−2) even at a relatively low bias voltage (0.1 V) compared with traditional n++-GaN/p++-GaN. And we optimize the InGaN layer including the thickness, indium component and the doping concentration to increase the tunneling probability with the 1D Schrödinger Poisson self-consistent method and WKB (Wentzel-Kramers-Brillouin) approximation. It is shown that the peak value of electric field in tunnel junction caused by spontaneous polarization and piezoelectric effect reaches 7.1 MV cm−1 with the 2D hole gas concentration of 2 × 1020 cm−3 at the interface between InGaN and GaN. That indicates n++-InGaN/p++-GaN tunnel junction has a potential application in GaN-based optoelectronic device.
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