A Low Power Single Ended Inductorless Wideband CMOS LNA With Gm Enhancement and Noise Cancellation

Abstract

This work proposes a low power single ended wideband CMOS low noise amplifier for low power short-range wireless communication based on IoT. The main novelty lies in significant improvement in bandwidth by using the inverter cell and in noise by noise cancellation topologies. By using active shunt-feedback architecture, the current of the feedback stage is reused on the forward path to improve the current efficiency of the LNA. The complementary characteristic leads to partial second-order distortion cancellation simultaneously. With TSMC 180 nm CMOS process, the proposed LNA presents maximum voltage gain of 15 dB, a minimum noise figure of 1.79 dB and an input 1 dB compression point of -24.65 dBm. It consumes 3 mW from 1.8 V dc supply and occupies a core area of 0.004 mm².