Abstract
In recent years, the potential technology for short distance and high-data wireless communication systems has been grown. Ultra-wideband (UWB) technology has emerged as a cons iderable interest and new technology. In this paper, a wideband CMOS Low Noise Amplifier (LNA) is proposed with a inverter structure using inductor peaking technique and broadband matching techniques, which meets stringent requirements of UWB system in the proposed specifications. Simulation results show the maximum power gain of 16.9 dB with the 3-dB band and input/output reflection coefficient of less than −10 dB from 3.1 to 10.6 GHz. In addition, the simulated LNA achieves the minimum noise figure (NF) of 3.4 dB from the operating frequency.
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