Abstract
A 25-40 GHz monolithic low-noise amplifier (LNA) is designed and fabricated with the 100 nm gallium nitride on silicon carbide (GaN-on-SiC) technology. This four-stage-cascade monolithic LNA performs a low DC power consumption of 150 mW and noise figure of 1.6-2.2 dB. Moreover, the gain of 34-37 dB with the continuous wave of more than 2 W over 24 hours can be achieved covering the operating bandwidth. Hence, this state-of-art LNA possesses a great potential to be directly integrated with GaN power amplifiers and other microwave components to realize the high-integration, high-reliability, and high-power RF front-end.
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