Abstract
A scalable, bias-dependent FET noise model developed for monolithic microwave integrated circuit (MMIC) design is discussed. A three-stage, 12-GHz, MMIC low-noise amplifier (LNA) designed with the model is described. The LNA has a 1.6-dB noise figure and 25.6-dB gain. Lumped elements were used to design an LNA that was significantly smaller per stage (0.31 mm/sup 2/) than previous MMIC LNAs. >
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