12 GHz low-noise MMIC amplifier designed with a noise model-that scales with MODFET size and bias

B Hughes,H Kondoh,I Perdomo

doi:10.1109/mcs.1993.247483

12 GHz low-noise MMIC amplifier designed with a noise model-that scales with MODFET size and bias

B Hughes, H Kondoh + Show 1 more

https://doi.org/10.1109/mcs.1993.247483

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Publication Date: Jun 14, 1993

Citations: 15

Affiliation: Hewlett-Packard (United States)

#Low-noise Amplifier #Monolithic Microwave Integrated Circuit + Show 8 more

Abstract
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Abstract

A scalable, bias-dependent FET noise model developed for monolithic microwave integrated circuit (MMIC) design is discussed. A three-stage, 12-GHz MMIC low-noise amplifier (LNA) designed with the model is described. The LNA has a 1.6-dB noise figure and 25.6-dB gain. Lumped elements were used to design an LNA that was significantly smaller per stage (0.31 mm/sup 2/) than previous MMIC LNAs. >

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