Abstract
This paper presents and discusses a Low-Band (LB) Low Noise Amplifier (LNA) design for a diversity receive module where the application is for multi-mode cellular handsets. The LB LNA covers the frequency range between 617 MHz to 960 MHz in 5 different frequency bands and a 5 Pole Single Throw (5PST) switch selects the different frequency bands where two of them are for the main and three for the auxiliary bands. The presented structure covers the gain modes from −12 to 18 dB with 6 dB gain steps where each gain mode has a different current consumption. In order to achieve the Noise Figure (NF) specifications in high gain modes, we have adopted a cascode Common-Source (CS) with inductive source degeneration structure for this design. To achieve the S11 parameters and current consumption specifications, the core and cascode transistors for high gain modes (18 dB, 12 dB, and 6 dB) and low gain modes (0 dB, −6 dB, and −12 dB) have been separated. Nevertheless, to keep the area low and keep the phase discontinuity within ±10, we have shared the degeneration and load inductors between two cores. To compensate the performance for Process, Voltage, and Temperature (PVT) variations, the structure applies a Low Drop-Out (LDO) regulator and a corner case voltage compensator. The design has been proceeded in a 65-nm RSB process design kit and the supply voltage is 1 V. For 18 dB and −12 dB gain modes as two examples, the NF, current consumption, and Input Third Order Intercept Point (IIP3) values are 1.2 dB and 16 dB, 10.8 mA and 1.2 mA, and −6 dBm and 8 dBm, respectively.
Highlights
The recent movement toward higher-order Multi-Input Multi-Output (MIMO) RadioFrequency (RF) structures is compounding additional RF receive path support and costeffective solutions for optimum performance trade-offs, where the diversity RF front-end structures have been proposed
The chip micro-photograph and layout of the whole system as well as LB Low Noise Amplifier (LNA) have been shown in Figure 4a,b, respectively
This paper presented a low-band low noise amplifier design for a diversity receive module for 2G/3G/4G/5G multi-mode cellular handsets which covered the frequency ranges between 617 MHz to 960 MHz in five different frequency bands
Summary
Frequency (RF) structures is compounding additional RF receive path support and costeffective solutions for optimum performance trade-offs, where the diversity RF front-end structures have been proposed. This module that includes Surface Acoustic Wave (SAW) filters, support the following frequency bands: B8, B26, B3, B39, B25, B34, B66, B40, B41, B7, etc., and some auxiliary bands [3]. Three auxiliary bands that are selected with the remaining three switches of the 5PST, cover the whole frequency range again including B8, B26 in one band, B71 & B29 (617–652 MHz) & (717–728 MHz) in the other band, and B12, B28, B20 (729–746 MHz & 758–803 MHz & 791–821 MHz) in the third band for later uses This structure covers the gains from −12 to 18 dB in 6 modes with 6 dB gain steps and with different current consumption.
Sign-in/Register to view highlights & summary 
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call