Abstract
We developed a new <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Y</i> -based methodology for extracting the electrical parameters in modern nanoscale double-gate and triple-gate FinFET devices. Using the drain-current equation in the linear region, which involves the Lambert <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">W</i> -function of the charge at the source, the nonlinear <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Y</i> -function in these devices is reduced to the linear one of a traditional long-channel MOSFET. The derived new <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Y</i> -function can be readily applied and evaluate all electrical parameters in a traditional fashion, since all related curves are now linear and easily extrapolated. The present methodology for extracting the electrical parameters was verified in both simulated and experimental nanoscale FinFETs, demonstrating its simplicity and good accuracy.
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