Abstract
In this work, ruthenium doped ZnO based Al/ZnO:Ru/p-Si/Al diodes were fabricated to explain photoresponse behavior of metal oxide based Schototky diodes. The particle size of the doped zinc oxide film about 168–362 nm with surface roughness 27.735 nm were measured respectively. The electrical properties of the Al/ZnO:Ru/p-Si/Al diode were measured using current voltage (I-V) and capacitance voltage (C-V) techniques. The electronic parameters of the diode were found to change with solar illuminations. The photo switching-off-on behaviour of the diode was analyzed by photoresponse characteristics. The photoresponse parameters of Al/ZnO:Ru/p-Si/Al are changed with Ru content. Finally, some perspectives for future investigation metal oxide based Schottky diodes are discussed as well. The ZnO based Schottky diodes can be used as photosensor in solar tracking and optic communication applications.
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