Annealing and charging of slow and fast states in metal-tunnel oxide-silicon diodes measured using capacitance-voltage and current-voltage techniques

Abstract

Capacitance-voltage (C-V) techniques are used to obtain new information on the effects of post-metallization annealing and charging of ultra-thin metal-tunnel oxide-silicon (MTOS) diodes, which we have previously characterized mainly using variations in the tunnel current density. The interrelationships between the annealing and charging and the nature of the defects are further illuminated in this work because of the ability of the C-V techniques to distinguish between charges contained in slow and fast states.