A Highly Integrated GaN Power Module with Low Parasitic Inductance and High Thermal Performance

Abstract

This paper presents a highly integrated 650V/150A GaN power module with low parasitic inductance and high thermal performance. The bus decoupling capacitors, drive components and bootstrap components are successfully integrated through proper layout, thus reducing main parasitic parameters and the need for an external isolated power supply. The high thermal performance is achieved by sandwiching the GaN bare dies between two alumina substrates with high thermal conductivity. The characteristics of the driver, parasitic inductance, and thermal are analyzed. A double-pulse-test is carried out on the presented GaN power module. The result shows that the power loop inductance is 0.75nH. The maximum voltage overshoot across the drain-source is 19.9V with a bus voltage of 400V. 50W power loss is placed on two GaN bare dies through their reverse conduction and the maximum temperature of the GaN power module is 100°C. A 3kW buck converter is built based on the proposed module, the power density of the whole module is calculated as 2160W/in <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> .