A high-performance near-infrared photodetector based on π-SnS phase

Abstract

This study presents a novel high-performance, non-toxic and low-cost near-infrared (NIR) photodetector based on a new cubic crystal structure (π-SnS) grown onto silicon wafer substrate by cost-effective and simple chemical bath deposition. The photodetector exhibits excellent photoresponse characteristics under NIR (750 nm) light illumination; sensitivity (3768), detectivity 1.35x1010 Jones, rise time (0.18 s) and decay time (0.16 s) at −5 V bias voltage. Moreover, the photodetector shows excellent reproducibility and stability characteristics. The as-fabricated SnS photodetector is a promising optoelectronic device efficient over NIR range.