Overall High-Performance Near-Infrared Photodetector Based on CVD-Grown MoTe2 and Graphene Vertical vdWs Heterostructure

Abstract

Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides (TMDCs), are highly appealing in the fields of electronics, optoelectronics, energy, etc. Graphene, with high conductivity and high carrier mobility, is an excellent candidate for transparent electrodes. TMDCs have remarkably strong light absorption in the range of visible to infrared wavelength. High-performance photodetectors are expected to achieve through the combination of graphene and TMDCs. Nowadays, near-infrared (NIR) photodetectors play significant roles in many areas. MoTe2 with bandgap energy of about 1.0 eV in its bulk form is a promising material for cost-saving NIR photodetectors. Thus far, only a few of the reported studies on NIR photodetectors built on MoTe2/graphene heterostructures have achieved high responsivity and short response time simultaneously in one device. In this study, we fabricate graphene–MoTe2–graphene vertical van der Waals heterostructure devices through chemical vapor deposition (CVD) growth, wet transfer method, and dry etching technique. Under 1064 nm laser illumination, we acquire responsivity of as high as 635 A/W and a response time of as short as 19 μs from the as-fabricated device. Moreover, we acquire higher responsivity of 1752 A/W and a shorter response time of 16 μs from the Al2O3-encapsulated device. Our research drives the application of 2D materials in the NIR wavelength range.