Abstract
A new lateral transistor, the self-aligned double diffused lateral (SADDL) transistor was devdoped for high-voltage linear IC's. It has a self-aligned narrow n-base to provide high h <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FE</inf> and high f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> , and an electric field reducible p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> collector and electrodes to provide high BV <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ceo</inf> . It was confirmed that f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> of the SADDL transistor was improved without deterioration of BV <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ceo</inf> by more than ten times that for other reported lateral transistors. A fabricated SADDL transistor of the 350 V class has a high h <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FE</inf> (∼100), high f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> (∼15 MHz), and high Early voltage ( > 1000 V).
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