Abstract
In this work, we propose a new structure of a double gate dopingless metal oxide semiconductor field effect transistor (MOSFET). The proposed device does not employ the conventional ways of ion implantation or diffusion to realize source and drain regions. However, it uses metals of different workfunctions to induce n+ source and drain regions in undoped silicon; a charge plasma concept. A 2D numerical simulation study has shown that a significant improvement in various performance parameters has been achieved in the proposed device. It is observed that the subthreshold slope (S) and cutoff frequency (f T )has significantly improved in the proposed device in comparison to a conventional doped MOSFET. Further, the leakage current was significantly decreased in the proposed device. Furthermore, since the proposed device does not employ ion implantation or diffusion to realize source and drain regions, therefore, it is free from random doping fluctuations (RDF) and doping control issues, and most importantly, it can be processed at low temperature.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call