A graphene integrated highly transparent resistive switching memory device

Sita Dugu,Shojan P Pavunny,Gerardo Morell,Brad R Weiner,Ram S Katiyar,Tej B Limbu

doi:10.1063/1.5021099

Sita Dugu, Shojan P Pavunny + Show 4 more

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Journal: APL Materials	Publication Date: Apr 30, 2018
Citations: 28	License type: cc-by

Affiliation: American University of Puerto Rico

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We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of &gt;82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (&lt;±1 V). The vertical two-terminal device shows an excellent resistive switching behavior with a high on-off ratio of ∼5 × 103. We also fabricated a ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

Highlights

Resistive switching is a basic physical phenomenon in which resistivity of materials can be electrically modulated between nonvolatile high and low conducting logic states
The potential incorporation of resistive random access memory (RRAM) in the realm of generation highly scaled electronic and optoelectronic circuits and neuromorphic computing is envisaged owing to its high operation speed (∼100 ps), high-density storage, low power consumption, excellent endurance (1012 cycles), low cost, and simple cell architecture.[1,2,3,4,5,6,7,8,9]
Researchers have demonstrated see-through transistors,[12,13] high transparency with efficient charge trapping is still a challenging task in mainstream floating gate thin film storage memories in addition to their physical scaling limitation. This issue can be overcome by RRAM that works on a non-charge-based mechanism[14] as long as both resistance-active material and electrodes possess more than 80% transparency throughout the visible spectrum.[15,16,17]

Summary

Introduction

Resistive switching is a basic physical phenomenon in which resistivity of materials can be electrically modulated between nonvolatile high and low conducting logic states. A graphene integrated highly transparent resistive switching memory device

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